Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

By X. Cui, Gwan‐Hyoung Lee, Young Duck Kim, Ghidewon Arefe, Pinshane Y. Huang, Chul‐Ho Lee, Daniel A. Chenet, Xian Zhang, Lei Wang, Fan Ye and 8 more. Nature Nanotechnology, 2015

1,234 citations recorded by the source corpus.

Atomically thin two-dimensional semiconductors such as MoS2 hold great promise for electrical, optical and mechanical devices and display novel physical phenomena. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, which has hampered efforts to observe its intrinsic quantum transport behaviours. Potential sources of disorder and scattering include defects such as sulphur vacancies in the MoS2 itself as well as extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering, we have developed here a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm(2) V(-1) s(-1) for six-layer MoS2 at low temperature, confirming that low-temperature performance in previous studies was limited by extrinsic interfacial impurities rather than bulk defects in the MoS2. We also observed Shubnikov-de Haas oscillations in high-mobility monolayer and few-layer MoS2. Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS2.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b1174da5be87881b0d2f89eb1b512d3932be4dbb

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In Materials Chemistry

Citations in the corpus

Production and processing of graphene and related materials (2020, methodology): “on the electrodes and measured without encapsulation, as in Ref [984].”
Calculating excitons, plasmons, and quasiparticles in 2D materials and van der Waals heterostructures (2017, background): “Furthermore, the weak interlayer bonding in vdWHs leads to clean and atomically well defined interfaces, thus reducing detrimental interface scattering effects [32, 33].”
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge (2020, background): “Cui et al demonstrated that the intrinsic mobility of MoS2 can be achieved by adopting h-BN and graphene as encapsulation layer and contact electrode, respectively, and eliminating the scattering effect of charge impurity, reporting the highest mobility of 34 000 cm2 V−1 s−1 at 5 K [26].”
The Computational 2D Materials Database: high-throughput modeling and discovery of atomically thin crystals (2018, methodology): “…an electron mobility of 240 cm 2 V − 1 s − 1 while a full ab initio calculation found a phonon-limited mobility of 400 cm 2 V − 1 s − 1 (in good agreement with experiments on hBN encapsulated MoS 2 [148]), with the acoustic phonon contribution corre sponding to a mobility of 1000 cm 2 V − 1 s − 1 .”