III–V nanowires and nanowire optoelectronic devices

By Yunyan Zhang, Jiang Wu, M. Aagesen, Huiyun Liu. 2015

163 citations recorded by the source corpus.

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation technology with good functionality, superior performance, high integration ability and low cost, because of their special growth modes and unique 1D structure. In this review, we summarize the main challenges and important progress of the fabrication and applications of III–V NWs. We start with the III–V NW growth, that significantly influences the NW morphology and crystal quality. Attention is then given to the fabrication of some advanced III–V structures composed of axial and radial junctions. After that, we review the advantages, challenges, and major breakthroughs of using III–V NWs as solar energy harvesters and light emitters. Finally, we attempt to give a perspective look on the future development trends and the remaining challenges in the research field of III–V NWs.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b06d7805deb1090058bbb06de42f9713aa1fa815