High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
By S. Bangsaruntip, Guy M. Cohen, Amlan Majumdar, Ying Zhang, S. Engelmann, Nicholas C. M. Fuller, L. Gignac, S. Mittal, J. Newbury, M. Guillorn and 4 more. International Electron Devices Meeting, 2009
292 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/afe100f294de6e25c088bd2bba41200f80a16501
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In Biomedical Engineering
In Electrical and Electronic Engineering
Citations in the corpus
- FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability (2018, methodology): “that were chosen to represent the RMS values observed in experiments [11], [20].”
- Nanomaterials in transistors: From high-performance to thin-film applications (2015, background): “There certainly are benefits in transistors from other types of nanomaterials, such as nanowires (6, 7), which are nanoscale versions of bulk materials.”
- Device Performance of Silicon Nanotube Field Effect Transistor (2014, background): “By contrast the SCE in other 3D FETs, for example in GAA, is degraded when the channel thickness is increased [7].”