GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer
By Jong Kyu Kim, T. Gessmann, E. Fred Schubert, J. Xi, Hong Luo, Jaehee Cho, C. Sone, Yongjo Park. 2006
138 citations recorded by the source corpus.
Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN∕low-n ITO/Ag ODR show a lower forward voltage and a 31.6% higher light-extraction efficiency than LEDs with Ag reflector. This is attributed to enhanced reflectivity of the ODR that employs the low-n ITO layer.
Subfields: Condensed Matter Physics, Materials Chemistry, Surfaces, Coatings and Films
View Paper: https://www.semanticscholar.org/paper/af2c86db104cd6410efc66fbbc3e0d93c8648cb6
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In Condensed Matter Physics
In Materials Chemistry
Citations in the corpus
- Solid-state lighting—a benevolent technology (2006, background): “Recently, GaN blue LEDs having new types of ODRs with high reflectivity, wide stop band and omni-directional reflection characteristics have been demonstrated [26, 28, 29].”