1 / f noise: Implications for solid-state quantum information

By Elisabetta Paladino, Y. Galperin, Giuseppe Falci, Boris L. Altshuler. 2013

544 citations recorded by the source corpus.

The efficiency of the future devices for quantum information processing will be limited mostly by the finite decoherence rates of the individual qubits and quantum gates. Recently, substantial progress was achieved in enhancing the time within which a solid-state qubit demonstrates coherent dynamics. This progress is based mostly on a successful isolation of the qubits from external decoherence sources obtained by clever engineering. Under these conditions, the material-inherent sources of noise start to play a crucial role. In most cases, quantum devices are affected by noise decreasing with frequency, f, approximately as 1/f. According to the present point of view, such noise is due to material- and device-specific microscopic degrees of freedom interacting with quantum variables of the nanodevice. The simplest picture is that the environment that destroys the phase coherence of the device can be thought of as a system of two-state fluctuators, which experience random hops between their states. If the hopping times are distributed in a exponentially broad domain, the resulting fluctuations have a spectrum close to 1/f in a large frequency range. In this paper we review the current state of the theory of decoherence due to degrees of freedom producing 1/f noise. We discuss basic mechanisms of such noises in various nanodevices and then review several models describing the interaction of the noise sources with quantum devices. The main focus of the review is to analyze how the 1/f noise destroys their coherent operation. We start from individual qubits concentrating mostly on the devices based on superconductor circuits, and then discuss some special issues related to more complicated architectures. Finally, we consider several strategies for minimizing the noise-induced decoherence.

Subfields: Artificial Intelligence, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/aeef198e7c27f3c4a3a151575ced729d26af4d44

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Citations in the corpus

Ion-trap measurements of electric-field noise near surfaces (2014, methodology): “…existence of a large ensemble of TLFs have been successfully used to explain the unusual low-temperature properties of glasses (Anderson et al., 1972; Phillips, 1972) or the appearance of current and voltage fluctuations with a 1/f frequency scaling (Dutta and Horn, 1981; Paladino et al., 2014).”
Scalable designs for quasiparticle-poisoning-protected topological quantum computation with Majorana zero modes (2016, background): “The dominant source of dephasing and relaxation in charge qubits originates from the electrostatic coupling of the charge to fluctuations in the background charges of the substrate [110].”
Stimulated Raman adiabatic passage in physics, chemistry, and beyond (2016, background): “, 2005) is to improve the properties of the junctions in order to suppress sources of 1/f noise (Paladino et al., 2014).”
Qubits made by advanced semiconductor manufacturing (2021, background): “spectral density shows a 1/f slope that is characteristic of charge noise in solid-state devices [45].”