Determination of band gap energy (Eg) of Cu2ZnSnSe4 thin films: On the discrepancies of reported band gap values
By Sejin Ahn, Sunghun Jung, J. Gwak, A. Cho, Keeshik Shin, K. Yoon, Doyoung Park, H. Cheong, J. Yun. 2010
315 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/aed36d336eca2b646d9e2fbe39c61c3c5427db41
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- 9.0% efficient Cu2ZnSn(S,Se)4 solar cells from selenized nanoparticle inks (2015, unknown): “0 eV [2,32,33], this suggests that some residual sulfur remains in the film, which is consistent with the slight offset of the selenized PXRD data.”
- Electrodeposited Cu2ZnSnSe4 thin film solar cell with 7% power conversion efficiency (2014, result): “As shown in Figure 3, CZTSe prepared at 585 C for 7min shows three peaks with Raman shift at 172, 195, and 234 cm (1), in agreement with previous reports [25].”