Band structure engineering of graphene by strain: First-principles calculations

By Gui Gui, Jin Li, J. Zhong. 2008

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Graphene Sensors (2011, background): “Still, theoretical calculations reveal that asymmetrical strain distributions in graphene result in opening of band gaps at the Fermi level while graphene with a symmetrical strain distribution is always a zero band-gap semiconductor [78].”
Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride (2013, background): “Very different from graphene, which has been shown that mechanical strain has very little effect on the band structure of large-area graphene,[64,65] the band gap of h-BN decreases dramatically with increasing tensile strain.”
Probing the Young’s modulus and Poisson’s ratio in graphene/metal interfaces and graphite: a comparative study (2015, unknown): “[50] 0.”
Colloquium: Graphene spectroscopy (2014, background): “Next, shifting the Dirac point in the k-space away from the K (K′) points (Dietl et al., 2008; Farjam and Rafii-Tabar, 2009; Ni et al., 2008a, 2009a; Pereira and Castro Neto, 2009). is analogous to the effect induced by an external magnetic field applied perpendicular to the graphene plane.”
Modulation of electronic and mechanical properties of phosphorene through strain (2014, unknown): “[18] G.”