Giant intrinsic carrier mobilities in graphene and its bilayer.

By S. Morozov, K. Novoselov, M. Katsnelson, F. Schedin, D. Elias, J. Jaszczak, A.K. Geim. Physical Review Letters, 2007

2,951 citations recorded by the source corpus.

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ae5d567355e00d47e4675977164e659138afbdda

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Materials Chemistry

1. N. M. R. Peres
2. K. Novoselov
3. A. Di Bartolomeo
4. E. Hwang
5. E. Rossi
6. Andrea C. Ferrari
7. S. Adam
8. A.K. Geim

Citations in the corpus

• Alignment of graphene nanoribbons by an electric-field (2009, background): “erties strongly depend on its atomic structure [8, 9, 10], understanding of 6 graphene’s mechanical behaviors in an electric field is of great importance for 7 nanoelectromechanical systems based on graphene.”
• Electronic transport in two-dimensional graphene (2010, background): “The temperature dependence is very weak at higher densities as observed in recent experiments (Morozov et al., 2008).”