Molecular doping of graphene.

By T. Wehling, K. Novoselov, S. Morozov, E. Vdovin, M. Katsnelson, A.K. Geim, A. Lichtenstein. Nano letters (Print), 2007

1,024 citations recorded by the source corpus.

Graphene is considered as one of the most promising materials for post silicon electronics, as it combines high electron mobility with atomic thickness [Novoselov et al. Science 2004, 306, 666-669. Novoselov et al. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451-10453]. The possibility of chemical doping and related excellent chemical sensor properties of graphene have been demonstrated experimentally [Schedin et al. Nat. Mater. 2007, 6, 652-655], but a microscopic understanding of these effects has been lacking, so far. In this letter, we present the first joint experimental and theoretical investigation of adsorbate-induced doping of graphene. A general relation between the doping strength and whether adsorbates are open- or closed-shell systems is demonstrated with the NO2 system: The single, open shell NO2 molecule is found to be a strong acceptor, whereas its closed shell dimer N2O4 causes only weak doping. This effect is pronounced by graphene's peculiar density of states (DOS), which provides an ideal situation for model studies of doping effects in semiconductors. We show that this DOS is ideal for "chemical sensor" applications and explain the recently observed [Schedin et al. Nat. Mater. 2007, 6, 652-655] NO2 single molecule detection.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ae0fd629032974307e8654053f7dd510ef832c25

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Citations in the corpus

Symmetry breaking in few layer graphene films (2007, background): “Upon doping the graphene by either deposition of foreign atoms [13, 14], molecules [15] or in a gated geometry [1, 2, 3], the carrier density can be easily manipulated.”
Research Progress of Gas Sensor Based on Graphene and Its Derivatives: A Review (2018, methodology): “Graphene material as a p-type semiconductor contains many holes [13], and has pull electron effect in gas atmosphere.”
Nanoporous C3N4, C3N5 and C3N6 nanosheets; novel strong semiconductors with low thermal conductivities and appealing optical/electronic properties (2020, background): “While graphene wonderful physics offer numerous possibilities to open a band gap by stretching [9,10], functionalization or doping [11–13] or formation of defects [14–16], but these methods necessitate rather elaborated post fabrication processes, resulting in substantial increase in the production ”