Graphene transistors fabricated via transfer-printing in device active-areas on large wafer
By Xiaogan Liang, Z. Fu, Stephen Y. Chou. 2007
338 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/adc6b4958fb180a35ff5077cbb52e7d323698921
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
- Hui‐Ming Cheng
- Zhong‐Shuai Wu
- W. Ren
- A. Di Bartolomeo
- M. Chhowalla
- G. Eda
- F. A. Bipasha
- Filippo Giubileo
In Materials Chemistry
- Hui‐Ming Cheng
- Zhong‐Shuai Wu
- W. Ren
- M. Chhowalla
- A. Di Bartolomeo
- Filippo Giubileo
- G. Eda
- F. A. Bipasha
Citations in the corpus
- The origin of wrinkles on transferred graphene (2011, positive): “After transferprinting onto the smooth SiO2/Si substrate and removing the PMMA film, these replicated topographic features may not be completely released because of the extra graphene area and the pinning effect from the SiO2/Si substrate [17].”
- Synthesis of graphene (2016, methodology): “done using a variety of agents like scotch tape [15], ultrasonication, [64] electric field [65] and even by transfer printing technique [66, 67], etc.”
- Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material. (2008, background): “In addition, promising approaches based on transfer printing of exfoliated graphene onto electrodes on different substrates for large-scale integration have been reported recentl”
- Synthesis of high-quality graphene with a pre-determined number of layers (2009, background): “[9] Liang X, Fu Z, Chou SY.”