Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides
By M. Ghorbani‐Asl, S. Borini, A. Kuc, Thomas Heine. 2013
243 citations recorded by the source corpus.
Quantum conductance calculations on the mechanically deformed monolayers of MoS$_2$ and WS$_2$ were performed using the non-equlibrium Green's functions method combined with the Landauer-B\"{u}ttiker approach for ballistic transport together with the density-functional based tight binding (DFTB) method. Tensile strain and compression causes significant changes in the electronic structure of TMD single layers and eventually the transition semiconductor-metal occurs for elongations as large as ~11% for the 2D-isotropic deformations in the hexagonal structure. This transition enhances the electron transport in otherwise semiconducting materials.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/ab88aeae739eea1093c9d222113e5cb358eda52c
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In Materials Chemistry
- Seiji Yunoki
- Mohammad Khazaei
- M. Arai
- M. Ghorbani‐Asl
- Tony Low
- A. Ranjbar
- D. van Thourhout
- Yunye Liang
Citations in the corpus
- Nearly free electron states in MXenes (2016, methodology): “ng a fast Fourier transform solver. The Landauer formula and the nonequilibrium Green’s function method has already been applied to low-dimensional systems for the electron transport, e.g., see Refs. [60, 61, 62, 63]. Results and discussion: A. Existence and origin of the NFE states Figure 1 shows p”
- Momentum-space indirect interlayer excitons in transition-metal dichalcogenide van der Waals heterostructures (2018, background): “The PL intensity scales with the square of the transition matrix element, which suggests that radiative recombination of K −K ILE is suppressed and is thus not seen in our PL measurements [24].”
- Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits (2019, methodology): “rain. A straightforward method to achieve strain in 2D nanocrystals is through mechanical bending, such as transferring them onto flexible substrates or wrapping them around a pre-patterned structure [6, 7, 8, 9]. Under small (<2%) compressive (tensile) strain, the bandgap increases (decreases) a”