Defect structure of oxide ferroelectrics—valence state, site of incorporation, mechanisms of charge compensation and internal bias fields

By Riidiger-A. Eichel. 2007

136 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ab3e66fab3aca834e4bdef790ddf896999a5152c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. P. Panda
2. B. Sahoo

In Electronic, Optical and Magnetic Materials

1. P. Panda
2. B. Sahoo

In Materials Chemistry

1. P. Panda
2. B. Sahoo

Citations in the corpus

• PZT to Lead Free Piezo Ceramics: A Review (2015, background): “Some dopants having intermediate ionic radii would be placed simultaneously on the A- and B-site which are called amphoteric dopants [16].”