In situ etching for total control over axial and radial nanowire growth
By Magnus Borgström, J. Wallentin, J. Trägårdh, P. Ramvall, M. Ek, L. Wallenberg, Lars Samuelson, K. Deppert. 2010
156 citations recorded by the source corpus.
AbstractWe report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/ab23ebfa065f7edd84ee174c1af23395eaf04c6b
How researchers see this paper
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In Biomedical Engineering
- Magnus Borgström
- J. Wallentin
- J. Johansson
- J. Bolinsson
- Lars Samuelson
- P. Caroff
- K. Deppert
- P. Wickert
In Electrical and Electronic Engineering
- Magnus Borgström
- J. Wallentin
- Lars Samuelson
- J. Johansson
- K. Deppert
- P. Caroff
- J. Bolinsson
- P. Wickert
In Materials Chemistry
- Magnus Borgström
- J. Wallentin
- J. Johansson
- J. Bolinsson
- P. Caroff
- Lars Samuelson
- P. Wickert
- P. Kuyanov
Citations in the corpus
- III–V nanowire photovoltaics: Review of design for high efficiency (2013, background): “In situ HCl etching can also be used to control nanowire morphology independent of growth conditions [84].”
- Doping of semiconductor nanowires (2011, methodology): “Another option, which has been used extensively in the experiments for this thesis, is to use in situ etching with hydrogen chloride (HCl) [55, 56].”
- Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism (2011, background): “can give rise to unwanted sidewall growth, resulting in tapering, and in the case of MOVPE, to unintentional carbon doping due to this effect [139], [140].”
- Nanowires With Promise for Photovoltaics (2011, methodology): “try to identify similarities and differences in the process to that at 450 ◦C [81].”