Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement
By M. Diarra, Yann-Michel Niquet, Christophe Delerue, G. Allan. 2007
230 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/aadf080986e6d3b98b3354bf0d1e4c4cab77948c
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In Biomedical Engineering
In Electrical and Electronic Engineering
Citations in the corpus
- Doping of semiconductor nanowires (2011, background): “Theoretical predictions [85] as well as experiments [86] have shown that the ionization energy of dopants increases in thin NWs due to electrostatic effects.”