Permittivity increase of yttrium-doped HfO2 through structural phase transformation

By K. Kita, K. Kyuno, A. Toriumi. 2004

157 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/aadd6632bb310b503ab4480f7ce64dad46df2ebd

Citations in the corpus

• Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics (2009, unknown): “158 , 159 , 160 By adding La atoms, the crystallization temperature of HfO 2 can be raised to 900°C, without compromising the dielectric constant (κ = 20 can be achieved).”