Weak localization and antilocalization in topological insulator thin films with coherent bulk-surface coupling

By I. Garate, L. Glazman. 2012

137 citations recorded by the source corpus.

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of bulk doping and bulk-surface tunneling rate. Our results reveal parameter regimes for both weak localization and weak antilocalization, and include diffusive Weyl semimetals as a special case.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/aa8c05ac21292d422218e364f6b3b1f366ca80d0