Measuring the absolute Raman cross section of nanographites as a function of laser energy and crystallite size

By Luiz Gustavo Cançado, A. Jorio, M. Pimenta. 2007

258 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/aa3f5c442417a29d7b71fefb1760ce65888fcf71

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In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Raman characterization of defects and dopants in graphene (2015, methodology): “While measuring absolute Raman intensities can be difficult [59, 71], the electron–phonon scattering rate can also be determined from the ratio of the 2D and G peak areas, A(G)/A(2D), using the equation, √ A(G)/A(2D) ∝ γep + γee ∝ γep + 0.”
Raman Spectroscopy in Graphene-Based Systems: Prototypes for Nanoscience and Nanometrology (2012, unknown): “In sequence, the ID/IG dependence on the excitation laser energy Elaser, already established for nanographite [88, 89], was extended to point defects in graphene [90], thus providing a formula for quantifying the amount of defects in graphene for any excitation laser energy.”
Raman spectroscopy study of the transformation of the carbonaceous skeleton of a polymer-based nanoporous carbon along the thermal annealing pathway (2015, background): “energy dependence of the G band scattering cross section [22].”
Interaction between graphene and copper substrate: The role of lattice orientation (2014, background): “integrated intensity was assumed to be dependent only on the excitation energy (EL) as I(G) ∝ EL(4) [54, 55] or I(G) ∝ EL(2) [56].”
Defect characterization in graphene and carbon nanotubes using Raman spectroscopy (2010, methodology): “For the Elaser dependence, the double-resonance features were shown to be Elaser independent, while IG shows the E4 laser dependence expected from scattering theory, as discussed above (Cançado et al. 2007).”
Structural analysis of polycrystalline graphene systems by Raman spectroscopy (2015, background): “It is known that the G band Raman intensity is proportional to the fourth power of the excitation laser energy EL, while the D band Raman cross section does not depend on EL [30, 31].”
Investigating nanostructures in carbon fibres using Raman spectroscopy (2018, background): “have shown experimentally that the intensity ratio ID/IG scales with the -4 th power of the excitation energy Eex [23-25].”
Analyzing the Raman Spectra of Graphenic Carbon Materials from Kerogens to Nanotubes: What Type of Information Can Be Extracted from Defect Bands? (2019, background): “As this band is due to a double resonance process [14] and its linewidth is correlated to the crystallite size [12], using it is highly interesting but requires an accurate understanding of the physical processes which are responsible for it.”