Atomic structure of dislocation cores in GaN

By A. Béré, A. Serra. 2002

146 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/aa0d9bc424efe5cd4d7f6c65d6ab91bf0752bac9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Kai Nordlund
2. K. Albe
3. Paul Erhart
4. J. Nord

In Electrical and Electronic Engineering

1. Paul Erhart
2. Kai Nordlund
3. K. Albe
4. J. Nord
5. Saurav Goel

In Mechanics of Materials

1. Kai Nordlund
2. K. Albe
3. Paul Erhart
4. J. Nord

Citations in the corpus

• Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride (2003, methodology): “Another short range potential based on the Stillinger–Weber formalism was proposed by Aı̈choune et al. (Aı̈choune et al. 2000) and used in a modified version for modelling dislocation core in GaN (Béré & Serra 2002).”