The origin of double peak electric field distribution in heavily irradiated silicon detectors

By V. Eremin, E. Verbitskaya, Z. Li. 2002

154 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Nuclear and High Energy Physics

View Paper: https://www.semanticscholar.org/paper/a99cae617102719703413c9bc181be38b1b0673a

Citations in the corpus

• Displacement Damage in Silicon Detectors for High Energy Physics (2018, unknown): “The formation of such a double-peak field structure can be explained by a polarization effect [40] and is illustrated in Fig.”