Mechanical cleaning of graphene

By A. Goossens, V. Calado, A. Barreiro, Kenji Watanabe, Takashi Taniguchi, Lieven M. K. Vandersypen. 2011

204 citations recorded by the source corpus.

Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force microscopy removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hexagonal boron nitride dielectrics exhibited a mobility of ∼36 000 cm2/Vs at low temperature.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a9903433c975b0e91140bf20f1eb08b99b570e99

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In Materials Chemistry

1. A. Morpurgo
2. L. Levitov

Citations in the corpus

• Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides (2016, background): “Adsorbates can be eliminated in a rather controlled way by a so-called atomic force microscope (AFM) “ironing” process [41], which is essential to realize high-mobility devices.”