Material-specific mapping of metal/semiconductor/dielectric nanosystems at 10 nm resolution by backscattering near-field optical microscopy
By R. Hillenbrand, F. Keilmann. 2002
183 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/a94f3d8fc55a8a8c186bb9d33dd96cd90a26230b
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In Atomic and Molecular Physics, and Optics
- R. Hillenbrand
- Francesco Bonaccorso
- F. Keilmann
- Andrea C. Ferrari
- A. Castellanos-Gómez
- M. Prato
- Nicola Marzari
- Nicola Maria Pugno
In Biomedical Engineering
- Kostas Kostarelos
- M. Prato
- A. Bianco
- R. Hillenbrand
- Francesco Bonaccorso
- F. Keilmann
- A. Castellanos-Gómez
- C. Backes
In Electrical and Electronic Engineering
- R. Hillenbrand
- F. Keilmann
- Francesco Bonaccorso
- Andrea C. Ferrari
- C. Backes
- Xiaodong Zhuang
- A. Ciesielski
- Paolo Samorì
Citations in the corpus
- Near-field microscopy by elastic light scattering from a tip (2004, background): “…that s-SNOM images will readily allow us to distinguish categorical material classes by amplitude contrast alone: polaritonresonant materials give exceptionally large signals, metals large signals, semiconductors medium signals, and low-index dielectrics low signals (Hillenbrand & Keilmann 2002).”
- Production and processing of graphene and related materials (2020, background): “As the dielectric function depends on the wavelength [1025], the scattering coefficients (amplitude and phase) of the investigated materials varies with the tuning of the laser wavelength [1026].”