Dilute nitride semiconductors

By M. Henini. 2005

179 citations recorded by the source corpus.

Contents Preface v CHAPTER 1 MBE GROWTH AND CHARACTERIZATION OF LONG WAVELENGTH DILUTE NITRIDE IIIV ALLOYS 1.1. Introduction 1.2. MBE Growth of Dilute IIIV Nitrides 1.3. Dilute Nitride Characterization 1.4. Energy Band and Carrier Transport Properties 1.5. Annealing and NIn Nearest Neighbor Effects 1.6. Summary Acknowledgements References CHAPTER 2 EPITAXIAL GROWTH OF DILUTE NITRIDES BY METAL-ORGANIC VAPOUR PHASE EPITAXY 2.1. Introduction 2.2. Epitaxial Growth of GaInAsN-based Structures 2.3. Long Wavelength GaAs-based Laser Performances 2.4. Conclusion Acknowledgements References CHAPTER 3 THE CHEMICAL BEAM EPITAXY OF DILUTE NITRIDE ALLOY SEMICONDUCTORS 3.1. Introduction to Dilute Nitride Semiconductors 3.2. The Chemical Beam Epitaxial/Metalorganic Molecular Beam Epitaxial (CBE/MOMBE) Growth Process 3.3. CBE of Dilute Nitride Semiconductors 3.4. Fundamental Studies of GaNx As (12 x ) Band Structure 3.5. The Compositions and Properties of Dilute Nitrides Grown by CBE 3.6. CBE-grown Dilute Nitride Devices 3.7. The Potential for Production CBE of Dilute Nitrides 3.8. Conclusions Acknowledgements References CHAPTER 4 MOMBE GROWTH AND CHARACTERIZATION OF IIIV-N COMPOUNDS AND APPLICATION TO InAs QUANTUM DOTS 4.1. Introduction 4.2. MOMBE Growth and Characterization of GaAsN 4.3. Relation of In and N Incorporations in the Growth of GaInNAs 4.4. Growth and Characterization of GaAsNSe New Alloy 4.5. Application of GaAsN to InAs Quantum Dots 4.6. Summary Acknowledgements References CHAPTER 5 RECENT PROGRESS IN DILUTE NITRIDE QUANTUM DOTS 5.1. Self-organized Quantum Dots 5.2. Dilute Nitride Quantum Dots 5.3. Recent Experimental Progress in GaInNAS QDS 5.4. Other Kinds of Dilute Nitride QDs 5.5. Summary and Future Challenges in Dilute Nitride QDs Acknowledgements References CHAPTER 6 PHYSICS OF ISOELECTRONIC DOPANTS IN GaAs 6.1. Nitrogen Isoelectronic Impurities 6.2. The Failure of the Virtual Crystal Approximation 6.3. Prevalent Theoretical Models on Dilute Nitrides 6.4. Electroreflectance Study of GaAsN 6.5. Resonant Raman Scattering Study of Conduction Band States 6.6. Compatibility with other Experimental Results 6.7. A Complementary Alloy: GaAsBi 6.8. Summary 6.9. Conclusion References CHAPTER 7 MEASUREMENT OF CARRIER LOCALIZATION DEGREE, ELECTRON EFFECTIVE MASS, AND EXCITON SIZE IN In x Ga1 2 x As 1 2 y N y Alloys 7.1. Introduction 7.2. Experimental 7.3. Single Carrier Localization in In x Ga1 2 x As 1 2 y N y 7.4. Measurement of the Electron Effective Mass and Exciton Wave function Size 7.5. Conclusions Acknowledgements References CHAPTER 8 PROBING THE UNUSUAL BAND STRUCTURE OF DILUTE Ga(AsN)QUANTUM WELLS BY MAGNETO-TUNNELLING SPECTROSCOPY AND OTHER TECHNIQUES 8.1. Introduction 8.2. Resonant Tunnelling Diodes Based on Dilute Nitrides 8.3. Magneto-Tunnelling Spectroscopy to Probe the Conduction Band Structure of Dilute Nitrides 8.4. Electronic Properties: From the Very Dilute Regime ( , 0.1%) to the Dilute Regime 8.5. Conduction in Dilute Nitrides and

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

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