Low carrier concentration crystals of the topological insulator Bi$_2$Te$_2$Se

By S. Jia, H. Ji, E. Climent-Pascual, M. Fuccillo, M. Charles, J. Xiong, N. Ong, R. Cava. 2011

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We report the characterization of Bi${}_{2}$Te${}_{2}$Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal-growth techniques. X-ray-diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity ($g1\phantom{\rule{0.28em}{0ex}}\ensuremath{\Omega}\phantom{\rule{0.16em}{0ex}}\mathrm{cm}$) and low carrier concentration ($\ensuremath{\sim}\phantom{\rule{-0.16em}{0ex}}5\ifmmode\times\else\texttimes\fi{}{10}^{16}$/cm${}^{3}$) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature-dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics

View Paper: https://www.semanticscholar.org/paper/a88fa020685ce136316366ee89a6d1f80d50655b