Electrically pumped hybrid AlGaInAs-silicon evanescent laser.

By A. Fang, Hyundai Park, O. Cohen, Richard Jones, Mario Paniccia, John E. Bowers. Optics Express, 2006

1,200 citations recorded by the source corpus.

An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a7b0a0b03a43e77ddfef6175a25d87e15ccd3c1a

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In Atomic and Molecular Physics, and Optics

  1. John E. Bowers
  2. Lukas Chrostowski
  3. Wim Bogaerts
  4. C. Doerr
  5. Martijn J. R. Heck
  6. Di Liang
  7. Lionel C. Kimerling
  8. R. Baets

In Electrical and Electronic Engineering

  1. John E. Bowers
  2. Lukas Chrostowski
  3. Wim Bogaerts
  4. Di Liang
  5. C. Doerr
  6. Richard A. Soref
  7. Michael Hochberg
  8. Martijn J. R. Heck

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