Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
By Zhe Wang, I. Gutiérrez-Lezama, N. Ubrig, M. Kroner, M. Gibertini, Takashi Taniguchi, Kenji Watanabe, A. Imamoğlu, E. Giannini, A. Morpurgo. Nature Communications, 2018
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Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report magneto-transport measurements on exfoliated CrI3 crystals. We find that tunneling conduction in the direction perpendicular to the crystalline planes exhibits a magnetoresistance as large as 10,000%. The evolution of the magnetoresistance with magnetic field and temperature reveals that the phenomenon originates from multiple transitions to different magnetic states, whose possible microscopic nature is discussed on the basis of all existing experimental observations. This observed dependence of the conductance of a tunnel barrier on its magnetic state is a phenomenon that demonstrates the presence of a strong coupling between transport and magnetism in magnetic van der Waals semiconductors. Layered van der Waals compounds offer opportunities to visit new physical phenomena in two dimensional materials. Here the authors report large tunneling magnetoresistance through exfoliated CrI3 crystals and attribute its evolution to the multiple transitions to different magnetic states.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/a75ae8492dd7c79b2ef107bf860af0c915806d0b
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Citations in the corpus
- Probing and controlling magnetic states in 2D layered magnetic materials (2019, positive): “…readout of magnetic states, the demonstration of very large TMR effects in spin-filter tunnel junctions incorporating 2D magnetic tunnel barriers 72,86,121,122 is certainly exciting — we have noted that even these first spin-filter devices demonstrated larger TMR ratios than state- of-the-art…”
- Colloquium : Spintronics in graphene and other two-dimensional materials (2019, background): “By taking advantage of this polarization switch, giant tunneling magnetoresistance was demonstrated in vertically studied samples (Klein et al., 2018; Song et al., 2018; Wang et al., 2018).”