Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

By Yao Guo, Xianlong Wei, J. Shu, Bo Liu, Jianbo Yin, C. Guan, Yuxiang Han, Song Gao, Qing Chen. 2015

255 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a75692b0b2e36c27d38c2dea95296b5c4925e3c2