Zinc oxide materials for electronic and optoelectronic device applications

By C. Litton, D. C. Reynolds, T. Collins. 2011

200 citations recorded by the source corpus.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a74c414e4d38feb16547d3807bc6e172dbfdcb9a

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In Materials Chemistry

1. Q. Xue

Citations in the corpus

• Oxygen vacancies: The origin of n -type conductivity in ZnO (2016, background): “ll known that diffusion phenomenon is closely associated with defect formation process. The defect formation enthalpy H f is given by ( , , ) ( ) p ( F VBM ) q F q H f D E E D E q E E ， (1) where E(Dq) is the total energy of the semiconductor with defect D in a charge state of q, and E p is the”