Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

By D. Cherns, S. Henley, F. Ponce. 2001

238 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a6e22d9cca4e43b30210dd50c9e1567cd296bb3d

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Citations in the corpus

• Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes (2002, background): “Additionally, the LED performance could be affected by the V-pits due to the absence of QW growth on the pit facets [11], [14].”
• InGaN Solar Cells: Present State of the Art and Important Challenges (2012, background): “and induces defects due to TD, thereby generating nonradiative recombination centers (NRCs) in the light-absorbing layer [78].”