Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

By Weixin OuYang, Feng Teng, Jr-hau He, Xiaosheng Fang. Advanced Functional Materials, 2019

417 citations recorded by the source corpus.

Semiconductor‐based photodetectors (PDs) convert light signals into electrical signals via the photoelectric effect, which involves the generation, separation, and transportation of the photoinduced charge carriers, as well as the extraction of these charge carriers to external circuits. Because of their specific electronic and optoelectronic properties, metal oxide semiconductors are widely used building blocks in photoelectric devices. However, the compromise between enhancing the photoresponse and reducing the rise/decay times limits the practical applications of PDs based on metal oxide semiconductors. As the behaviors of the charge carriers play important roles in the photoelectric conversion process of these PDs, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge‐carrier behaviors and improve the photoelectric performance of related PDs. This review aims to introduce and summarize the latest researches on enhancing the photoelectric performance of PDs based on metal oxide semiconductors via charge‐carrier engineering, and proposes possible opportunities and directions for the future developments of these PDs in the last section.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a64b636388c9ee33bac62bcbb8d736fc0227ee98

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In Electrical and Electronic Engineering

1. Zhi Zheng
2. Yong Zhang
3. Weilie Zhou
4. Xiaotao Zu

In Materials Chemistry

1. Zhi Zheng
2. Yong Zhang
3. Weilie Zhou
4. Xiaotao Zu

Citations in the corpus

• Rational design of type-II nano-heterojunctions for nanoscale optoelectronics (2020, methodology): “shortens the carrier transit time while prolongs the photon absorption path length [95,96].”