Well-posedness for the drift-diffusion system in Lp arising from the semiconductor device simulation

By Masaki Kurokiba, T. Ogawa. 2008

77 citations recorded by the source corpus.

Abstract We discuss strong solutions of a nonlinear parabolic system that arise from the simulation for the semiconductor device design. This equation considered here is governing the electron and positive hole dynamics on the MOS FET for the Large Scaled Integral-Circuit (V-LSI). We show that the existence and uniqueness and stability of the strong solution in L p spaces and will discuss on the global existence.

Subfields: Applied Mathematics, Control and Systems Engineering, Mathematical Physics

View Paper: https://www.semanticscholar.org/paper/a5e902a16a382c3d7aba3d0fa709060978420155