Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

By Yujun Deng, Yijun Yu, Yicheng Song, Jingzhao Zhang, Naizhou Wang, Zeyuan Sun, Yangfan Yi, Yi Zheng Wu, Shiwei Wu, Junyi Zhu and 3 more. Nature, 2018

2,261 citations recorded by the source corpus.

Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7–11 based on atomically thin van der Waals crystals. Monolayers of Fe3GeTe2 exhibit itinerant ferromagnetism with an out-of-plane magnetocrystalline anisotropy; ionic gating raises the ferromagnetic transition temperature of few-layer Fe3GeTe2 to room temperature.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a5dabeb4bfa530a3b9184ac575f8b1a7e667068f

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In Atomic and Molecular Physics, and Optics

  1. M. Ezawa
  2. Hector Ochoa
  3. I. Vera-Marun
  4. Weisheng Zhao
  5. Ahmet Avsar
  6. J. V. Wees
  7. Xichao Zhang
  8. J. Coraux

In Materials Chemistry

  1. Hector Ochoa
  2. M. Ezawa
  3. I. Vera-Marun
  4. Xing Wu
  5. J. Coraux
  6. B. Özyilmaz
  7. Francisco Guinea
  8. N. M. R. Peres

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