Controlling the Schottky barrier at MoS 2/metal contacts by inserting a BN monolayer

By M. Farmanbar, G. Brocks. 2015

163 citations recorded by the source corpus.

Making a metal contact to the two-dimensional semiconductor MoS 2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high work function (≳4.7 eV) metals, the Fermi level is pinned at 0.1–0.3 eV below the conduction band edge of MoS 2 for low work function metals, due to the metal-MoS 2 interaction. Inserting a boron nitride (BN) monolayer between the metal and the MoS 2 disrupts this interaction, and restores the MoS 2 electronic structure. Moreover, a BN layer decreases the metal work function of Co and Ni by ∼2 eV, and enables a lineup of the Fermi level with the MoS 2 conduction band. Surface modification by adsorbing a single BN layer is a practical method to attain vanishing Schottky barrier heights.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a47ea7ae5f17452b0523e76e6953c732cc243f2f

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In Materials Chemistry

1. Sanjay Kumar Banerjee
2. Hema C. P. Movva
3. Amritesh Rai
4. D. Taneja
5. Anupam Roy
6. Sayema Chowdhury

Citations in the corpus

• Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “In addition to ultra-thin insulating oxides, other 2D materials such as graphene and a monolayer of insulating hBN were also proposed as effective 2D insertions or buffer layers to alleviate the n-type SBH at the metal/MoS2 interface [238,239].”