Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies

By L. Biedermann, M. Bolen, M. Capano, D. Zemlyanov, R. Reifenberger. 2009

190 citations recorded by the source corpus.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a3d931e06a6b47da6f4852f9a9c4bb07b99d6e4d

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In Materials Chemistry

1. M. Bernal
2. Marianella Hernández
3. M. López-Manchado
4. R. Verdejo
5. T. Iakimov
6. Rositsa Yakimova
7. G. Yazdi

Citations in the corpus

• Overall performance of natural rubber/graphene nanocomposites (2012, background): “5 eV peak and it is characteristic of graphitic systems [26].”
• Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “Low-energy electron diffraction [134] and scanning tunneling microscopy [54] results indicate a significant degree of rotational disorder in the graphene films.”