Carrier transport in polycrystalline ITO and ZnO:Al II: The influence of grain barriers and boundaries
By K. Ellmer, R. Mientus. 2008
203 citations recorded by the source corpus.
Abstract ITO and ZnO:Al films have been deposited by magnetron sputtering from ceramic and metallic targets at different substrate temperatures and with different plasma excitation modes: DC and RF (13.56 and 27.12 MHz). Temperature-dependent conductivity and Hall measurements (down to 50 K) were used to determine the carrier concentrations N D and the Hall mobilities μ . From the μ ( N D ) dependences, which were fitted by a carrier transport model taking into account ionized impurity and grain barrier scattering, the trap densities at the grain boundaries were estimated. ITO films show much lower trap densities down to N t ≈ 1.5 · 10 12 cm − 2 , compared to N t values up to 3.10 13 cm − 2 for ZnO:Al films. The temperature-dependent mobilities were fitted by a phenomenological model with a T -independent term and a metal-like contribution or a thermally-activated part due to grain barrier-limited transport. Seebeck coefficient measurements as a function of the carrier concentration give hints to different transport mechanisms in ITO and ZnO.
Subfields: Materials Chemistry, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/a3bd33b32096c513273c2f29942ed9117213c878
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In Materials Chemistry
Citations in the corpus
- Oxides and nitrides as alternative plasmonic materials in the optical range (2011, background): “The differences in the properties of AZO, GZO and ITO occur as a result of the differences in their dopant solid-solubility limits and doping efficiencies [13, 15].”