Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots

By Andrew J. Williamson, Lin-Wang Wang, Alex Zunger. 2000

309 citations recorded by the source corpus.

We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment, including quantites such as the single particle electron and hole energy level spacings, the excitonic band gap, the electron-electron, hole-hole and electron hole Coulomb energies and the optical polarization anisotropy. We find a generally good agreement, which is improved even further for a dot composition where some Ga has diffused into the dots.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a3a3743acb34c171b38bcbbc27621b193c164abd

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Gerhard Klimeck
2. Vei Wang
3. Gang Tang
4. Wen-Tong Geng
5. N. Xu
6. Jin Cheng Liu
7. Mark S. Lundstrom

In Materials Chemistry

1. Vei Wang
2. Gang Tang
3. Wen-Tong Geng
4. N. Xu
5. Jin Cheng Liu
6. Gerhard Klimeck

Citations in the corpus

• VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code (2019, methodology): “In Table 6 we show the calculated effective masses for several typical 2D and bulk semiconductors with available effective mass data, including Phosphorene [53], MoS 2 [53], GaAs [66] and Diamond [67].”
• Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks (2007, methodology): “[24], [25] are also implemented in NEMO 3-D.”