Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE
By K. Ikejiri, J. Noborisaka, S. Hara, J. Motohisa, T. Fukui. 2007
148 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/a39f3e2f0f14c57b56762f1a72a1508a3af46bae
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
In Materials Chemistry
Citations in the corpus
- III–V nanowire photovoltaics: Review of design for high efficiency (2013, methodology): “3 SA-MOVPE The selective area MOVPE (SAMOVPE) method uses patterned holes in an oxide mask to define the location of nanowire growth, similar to the selfassisted growth method but without the need for a metal seed particle [43–45].”