Interrelation of structural and electronic properties in InxGa1-xN/GaN quantum dots using an eight-band k · p model

By M. Winkelnkemper, A. Schliwa, D. Bimberg. 2006

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We present an eight-band kp-model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InxGa1 xN) QDs formed by composition fluctuations in InxGa1 xN layers. The eight-band kp-model accounts for strain effects, piezoelectric and pyroelectricity, spin-orbit and crystal field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of InxGa1 xN QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/a3921d1f094bd652b3b7a560710bbb4ec464d947