Atomic structure of the 6H–SiC(0 0 0 1) nanomesh

By Wei Chen, Hai Xu, Lei Liu, Xingyu Gao, D. Qi, G. Peng, S. Tan, Y. Feng, K. Loh, A. Wee. 2005

143 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a2b4287ca968f98c5fcab615cc4a645189959382

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. T. Yu
2. A. Wee
3. Zhenhua Ni
4. Xingyu Gao
5. Yingying Wang
6. D. Qi
7. Wei Chen
8. Zexiang Shen

In Materials Chemistry

1. Zhenhua Ni
2. T. Yu
3. Zexiang Shen
4. Yingying Wang
5. A. Wee
6. V. Pellegrini
7. Wei Chen
8. K. Emtsev

Citations in the corpus

• Surface transfer doping of semiconductors (2009, background): “2 shows the evolution of synchrotron-based high-resolution C 1s PES spectra of SiC as a function of annealing temperature [123].”
• Raman spectroscopy and imaging of graphene (2008, methodology): “Nano Research tunneling microscopy (STM) [76, 77], have also been carried out.”
• Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, background): “s eluded STM studies so far. Several reports suggested a hexagonal atomic arrangement such as in monolayer graphene [8,10- 14], but also a nanomesh structure with isolated carbon islands was proposed [5]. The discovery that the buffer layer can be converted into pristine sp2-bonded graphene (the so-”