Graphene-on-Sapphire and Graphene-on-Glass: Raman Spectroscopy Study
By I. Calizo, Wenzhong Bao, Feng Miao, A. Balandin. 2007
190 citations recorded by the source corpus.
The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while G peak of graphene on Si/SiO2 and GaAs is positioned at 1580 cm -1 it is down-shifted by ~5 cm -1 for graphene-on-sapphire (GOS) and, in many cases, splits into doublets for graphene-on-glass (GOG) with the central frequency around 1580 cm -1 . The obtained results are important for graphene characterization and its proposed graphene applications in electronic devices.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/a257f8287712c94ee0c9767df2c29c690c50723f
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