Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities
By Diego Porras, C. Ciuti, J. Baumberg, C. Tejedor. 2002
147 citations recorded by the source corpus.
We present a theoretical model that allows us to describe the polariton dynamics in a semiconductor microcavity at large densities, for the case of nonresonant excitation. Exciton-polariton scattering from a thermalized exciton reservoir is identified as the main mechanism for relaxation into the lower polariton states. A maximum in the polariton distribution that shifts towards lower energies with increasing pump power or temperature is shown, in agreement with recent experiments. Above a critical pump power, macroscopic occupancies (5x10(4)) can be achieved in the lowest-energy polariton state. Our model predicts the possibility of Bose-Einstein condensation of polaritons, driven by exciton-polariton interaction, at densities well below the saturation density for CdTe microcavities.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Civil and Structural Engineering
View Paper: https://www.semanticscholar.org/paper/a233da263fda72b07ce108e425f646e9dd029ea4
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Citations in the corpus
- Exciton-plasmon coupling interactions: from principle to applications (2017, background): “A new polaron is formed by the interaction between light and excitons, and the formation may also lead to the Bose-Einstein condensation [75].”
- Polariton polarization-sensitive phenomena in planar semiconductor microcavities (2009, background): “…in the highdensity limit can be efficiently accounted for by introducing renormalizations of the Rabi constant leading to bleaching of the excitonic transition when the excitonic density approaches a critical value (Hanamura 1970, Schmitt-Rink et al 1985, Porras et al 2002, Sarchi and Savona 2008).”