High-k/Ge MOSFETs for future nanoelectronics

By Y. Kamata. 2008

441 citations recorded by the source corpus.

Recently developed high-permittivity (k) materials have reopened the door to Ge as a channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge gate stacks are very promising for future nanoscale devices. This article reviews the opportunities and challenges of high-k/Ge MOSFET technology. The most important technical issue is the passivation of the Ge surface. Physical phenomena and electrical characteristics that depend on the high-k/Ge interface are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a212dc05afb17e190bacf662897e48569749a910

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In Atomic and Molecular Physics, and Optics

1. Ju Li
2. Ting Zhu
3. Hasan Metin Aktulga
4. Ananth Y. Grama
5. Michael J. Janik
6. Sulin Zhang

In Electrical and Electronic Engineering

1. Sulin Zhang
2. Ting Zhu
3. Adri C. T. van Duin
4. K. Zhao
5. Ju Li

Citations in the corpus

• Electrochemomechanical degradation of high-capacity battery electrode materials (2017, background): “Though Ge is more expensive than Si, it has a much higher electrical conductivity [139] and Li diffusivity [14,140] than Si, making Ge an excellent candidate for high-power applications.”
• The ReaxFF reactive force-field: development, applications and future directions (2016, methodology): “Recent studies have focused on ALD of Al2O3 using trimethylaluminum (TMA) and H2O cycles as a route for developing Ge-based metal oxide semiconductors (CMOS).(89,93,94) To demonstrate the temperature dependence of TMA nucleation on a bare Ge(100) surface, which has been previously reported in the li”