Reversible 300 K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor

By D. A. Schwartz, Daniel R. Gamelin. 2004

268 citations recorded by the source corpus.

The discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstitial Zn. Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results demonstrate for the first time reversible room-temperature ferromagnetic ordering in a diluted magnetic semiconductor, and present new opportunities for integrating magnetism and conductivity in semiconductor sensor or spin-based electronics devices.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a0f5a0cea16d0e8b072faba87840879e9049a4bf

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. M. Chisholm
2. S. Pearton
3. M. Ivill
4. A. Hebard
5. P. Sadik
6. J. Budai
7. L. Leu
8. R. Das

In Materials Chemistry

1. M. Chisholm
2. S. Pearton
3. D. Norton
4. M. Ivill
5. A. Hebard
6. P. Sadik
7. J. Budai
8. L. Leu

Citations in the corpus

• Structure and magnetism of cobalt-doped ZnO thin films (2008, methodology): “This small value, however, is in good agreement with reports on Co-doped ZnO that has been modified by vacuum annealing [37] or by Zn vapor anneals [38].”