Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction.

By Hongtao Yuan, Xiaoge Liu, Farzaneh Afshinmanesh, Wei Li, Gang Xu, Jie Sun, Biao Lian, A. Curto, G. Ye, Y. Hikita and 6 more. Nature Nanotechnology, 2015

772 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a0947ae5a447e32655f0aaf264cc615920f468aa

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In Electrical and Electronic Engineering

1. Xingzhu Chen
2. J. Bullock
3. Xiujian Zhao
4. Kenneth B. Crozier
5. Pengfei Chen
6. Ali Javey
7. Wee‐Jun Ong
8. Fengnian Xia

In Electronic, Optical and Magnetic Materials

1. Kenneth B. Crozier
2. Yu-Lun Chueh

In Materials Chemistry

1. Han Wang
2. Fengnian Xia
3. Xingzhu Chen
4. Xiujian Zhao
5. Pengfei Chen
6. Ali Javey
7. Wee‐Jun Ong
8. Madan Dubey

Citations in the corpus

• Optoelectronic devices based on two-dimensional transition metal dichalcogenides (2016, background): “[117] demonstrated a broadband multi-layer BP (30–50 nm) photodetector, with polarization sensitivity over wavelengths in the 400–1,700 nm range (Fig.”
• Anisotropic optical and electronic properties of two-dimensional layered germanium sulfide (2017, methodology): “The optical-absorption spectrum was measured using the transmission values and thickness of the sample using a halogen light source in the Raman microscope [1].”