Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy.
By T. Ohta, A. Bostwick, J. McChesney, T. Seyller, K. Horn, Eli Rotenberg. Physical Review Letters, 2006
608 citations recorded by the source corpus.
The unusual transport properties of graphene are the direct consequence of a peculiar band structure near the Dirac point. We determine the shape of the pi bands and their characteristic splitting, and find the transition from two-dimensional to bulk character for 1 to 4 layers of graphene by angle-resolved photoemission. By detailed measurements of the pi bands we derive the stacking order, layer-dependent electron potential, screening length, and strength of interlayer interaction by comparison with tight binding calculations, yielding a comprehensive description of multilayer graphene's electronic structure.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/9f695b8a32f694e5420cdcd5f7517fc2c215c0a0
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In Atomic and Molecular Physics, and Optics
- K. Novoselov
- N. M. R. Peres
- A. C. Castro Neto
- A.K. Geim
- Francisco Guinea
- A. Bostwick
- T. Seyller
- K. Emtsev
In Materials Chemistry
- K. Novoselov
- N. M. R. Peres
- A. C. Castro Neto
- Francisco Guinea
- A.K. Geim
- T. Seyller
- E. Hwang
- A. Bostwick
Citations in the corpus
- Production, properties and potential of graphene (2010, background): “[30] Ohta T, Bostwick A, McChesney JL, Seyller T, Horn K, Rotenberg E.”
- Symmetry breaking in few layer graphene films (2007, methodology): “Systematic studies of the thickness and doping dependence by ARPES have been presented by Ohta et al.[13, 24].”
- Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “Both the Bernal (AB) and rhombohedral (ABC) stacking sequences are described theoretically [106,107] and experimentally [108,109].”
- Improvements on non-equilibrium and transport Green function techniques: The next-generation transiesta (2016, background): “4Å corresponds well to experimentally found values for similar gate levels [63].”