Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells

By L. G. Gerling, C. Voz, R. Alcubilla, J. Puigdollers. 2017

154 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/9f205956c38cb6b9c920f32f00b43cd83c394c8d

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In Electrical and Electronic Engineering

1. O. Almora
2. B. Macco
3. G. Garcia‐Belmonte
4. C. Voz
5. Jimmy Melskens
6. L. G. Gerling
7. L. Black
8. J. Puigdollers

Citations in the corpus

• Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells (2017, background): “This is the reason why it has been proposed [10, 15] that a dipole layer Δ is present at the TMO/n-Si interface, in order to equilibrate the Fermi levels in the energy band diagram once the heterojunction is formed.”
• Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, background): “Based on these properties, MoOx can be considered as part of a family of materials together with WOx [97], [98], [101], [102], and vanadium oxide (VOx ) [97], [98], [103].”