High resistivity annealed low-temperature GaAs with 100 fs lifetimes
By I. Gregory, C. Baker, W. Tribe, M. Evans, Harvey E. Beere, E. Linfield, A. Davies, M. Missous. 2003
152 citations recorded by the source corpus.
Subfields: Astronomy and Astrophysics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/9ef649e4f297f7237496f5686a83d5bdaee63002
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In Astronomy and Astrophysics
In Atomic and Molecular Physics, and Optics
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Citations in the corpus
- Terahertz Frequency Sensing and Imaging: A Time of Reckoning Future Applications? (2005, background): “As will be shown, further developments in the technology toward lower cost and a wider range of devices for compactness and power can be expected [107]–[113].”
- Intense ultrashort terahertz pulses: generation and applications (2011, methodology): “Carrier lifetimes shorter than 500 fs can be achieved with this method [32–34].”