Etch rates for micromachining processing-Part II

By K. R. Williams, Kishan Gupta, M. Wasilik. 2003

1,080 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/9e38231d9755eee6d8133c668ab5256bea80a3f4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. A. Liou
2. R. Chen

In Electrical and Electronic Engineering

1. K. R. McIntosh
2. Andrew Blakers
3. K. Fong
4. T. Kho
5. Matthew Stocks
6. Ngwe Zin
7. E. Franklin
8. A. Liou

Citations in the corpus

• Design, fabrication and characterisation of a 24.4% efficient interdigitated back contact solar cell (2016, methodology): “In this work, we use a stack consisting of a thin thermally grown silicon dioxide (SiO2) beneath a LPCVD of stoichiometric silicon nitride (Si3N4), which was chosen because it preserves or improves the surface passivation that can be achieved with thermally grown silicon dioxide and is well known fo”
• Injection molding of polymer micro- and sub-micron structures with high-aspect ratios (2006, methodology): “etching and (110) silicon wafers are used to fabricate the mold inserts with surface micro-channels that are wider than 1 μm, with widths of 20, 10 and 2 μm, and aspect ratios of over 12 [10– 13].”