Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization (vol 96, 122106, 2010)
By H. Cao, Qingkai Yu, L. Jauregui, Jifa Tian, Wei Wu, Zhihong Liu, R. Jalilian, Daniel K. Benjamin, Zhigang Jiang, Jiming Bao and 2 more. 2009
189 citations recorded by the source corpus.
We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 in.) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on microdevices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio ∼5 and carrier mobilities up to ∼3000 cm2/V s) and “half-integer” quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry, Physical and Theoretical Chemistry
View Paper: https://www.semanticscholar.org/paper/9e0e64b5c4efdfef9de15125579c1d4e05b258fd
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Citations in the corpus
- Roll-to-roll production of 30-inch graphene films for transparent electrodes. (2009, background): “This allows the observation of the quantum Hall effect (QHE”
- Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition. (2010, background): “In particular, it has been shown that large and predominantly monolayer graphene of excellent quality can be synthesized by CVD on polycrystalline Cu foil”
- Experimental Review of Graphene (2011, methodology): “Preliminary studies suggested that grain boundaries (Yazyev and Louie, 2010), doping defects (Wei et al., 2009) and ineffective gate voltage control (Cao et al., 2010) might limit the mobility.”