Optical manipulation of the exciton charge state in single-layer tungsten disulfide

By A. Mitioglu, P. Płochocka, J. Jadczak, W. Escoffier, G. Rikken, L. Kulyuk, D. Maude. 2013

172 citations recorded by the source corpus.

Raman scattering and photoluminescence (PL) emission are used to investigate a single layer of tungsten disulfide (WS${}_{2}$) obtained by exfoliating $n$-type bulk crystals. Direct gap emission with both neutral and charged exciton recombination is observed in the low temperature PL spectra. The ratio between the trion and exciton emission can be tuned simply by varying the excitation power. Moreover, the intensity of the trion emission can be independently tuned using additional subband gap laser excitation.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9d5fc021970b7d8761d0b02b92fef3657e494e56

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Citations in the corpus

• Valley excitons in two-dimensional semiconductors (2015, background): “From the energy splitting, the trion charging energy Ec is determined to be 18 meV [15], 30 meV [14], 20-40 meV [51] and 30 meV [13] in monolayer MoS2, MoSe2, WS2 and WSe2 respectively.”