Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

By Guanhua Zhang, H. Qin, J. Teng, Jiandong Guo, Qi Guo, X. Dai, Z. Fang, Kehui Wu. 2009

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We report the growth of atomically smooth, single crystalline Bi 2 Se 3 thin films on Si(111) by using molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, X-ray photoelectron emission spectroscopy and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The film grows in a self-organized quintuple-layer by quintuple-layer mode, and atomically smooth film can be obtained with the thickness down to one quintuple-layer (~1nm).

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/76031a469998686b0e70be1f1cf196ff0e106c31